Depositions of In2xGa2−2xO3-based films and their application in the fabrication of a thin-film transistor

Abstract

Compositions of [Formula: see text] and [Formula: see text] were mixed and sintered at 1250[Formula: see text]C to fabricate [Formula: see text] and [Formula: see text] targets, and RF sputtering method was used to deposit [Formula: see text] and [Formula: see text] films by introducing pure Argon during the deposition process. After [Formula: see text] and [Formula: see text] films were deposited, we used the X-ray diffraction pattern to analyze their crystalline properties, the ultraviolet–visible-infrared spectrophotometry to measure their transmittance spectra in the wavelength range of 200–800 nm, an X-ray photoelectron spectroscopy to find their composition variation, and a Hall equipment to measure their electrical properties, including the carrier concentration, the mobility, and the resistivity. We found that the absorption edges of [Formula: see text] films were shifted to higher wavelength as [Formula: see text] value increased from 0.2 to 0.4. We also found that the Hall parameters of [Formula: see text] film could not be measured because of its high resistivity. Therefore, [Formula: see text] film was used to fabricate thin-film transistor (TFT), and the electrical properties of the fabricated TFT were also well investigated.