ABOUT KINKS IN AlGaAs LASERS LIGHT-CURRENT CHARACTERISTIC

Abstract

The origin of the kinks in semiconductor lasers light-current characteristic (L(l)) is theoretically alld experimentally analyzed. The devices are straight separate confinement heterostructure lasers. We have developed a model to calculate L(l) which considers two thermal loss mechanisms: the leakage current and Auger recombination. It is shown that the kinks in the light-current characteristic appear at temperatures at which the considered mechanisms crossover.