Low-temperature LPE technique for the performance of visible AlGaAs (SC) lasers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference8 articles.
1. : Heterostructure Lasers, New York 1978, part A, chapter 4, pp 201, 248
2. Characteristics of GaAsAlGaAs (SCH) lasers grown by low-temperature LPE technique
3. Prediction of semiconductor heterojunction discontinuities from bulk band structures
4. Low‐current‐threshold (GaAl)As visible lasers with emission wavelengths below 750 nm
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1. ABOUT KINKS IN AlGaAs LASERS LIGHT-CURRENT CHARACTERISTIC;Modern Physics Letters B;2001-08-20
2. Study of AlGaAs Laser Heterostructures with Multiquantum Well Active Region Grown by low Temperature Liquid Phase Epitaxy;Crystal Research and Technology;2001-06
3. Cavity length dependence of the peak conversion efficiency in AlGaAs lasers;Journal of Applied Physics;1996-04
4. Influence of cavity length and emission wavelength on the characteristic temperature in AlGaAs lasers;Journal of Applied Physics;1995-05
5. Investigation of LPE Ga1−xAlxAs/GaAs laser structures by double crystal diffractometry;Journal of Crystal Growth;1991-09
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