Fabrication of transparent ITO/GTO bilayer diode thin films-Reference-Cited by-同舟云学术

Fabrication of transparent ITO/GTO bilayer diode thin films

Published:2023-03-06 Issue:19 Volume:37 Page:
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

Chairul Imran Sutan¹,Echimoto Atsushi²,Tazawa Ryutaro²,Murai Kei-ichiro²,Moriga Toshihiro²

Affiliation:

1. Faculty of Electrical Engineering, Universiti Technikal Malaysia Melaka, Durian Tunggal, Melaka, Malaysia

2. Department of Chemical Science and Technology, Graduate School of Advanced Technology and Science, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan

Abstract

Transparent diodes were fabricated by layering a Ga–Sn–O (GTO) film onto an In2O3:Sn (ITO) film using a facing-targeted DC sputtering method. When a GTO film containing [Formula: see text] mol% Ga was deposited on the surface of the conductive ITO film at room temperature, a diode bilayer film was obtained.The bilayer film exhibited rectification characteristics of approximately 0 and 3.8 [Formula: see text]A/V when negative and positive voltages were applied, respectively. However, the rectification characteristics increased up to 68.3 [Formula: see text]A/V in the positive voltage applied region after annealed at 200[Formula: see text]C.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984923400390

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4. Schottky Nature of Au/SnO2 Ultrathin Film Diode Fabricated Using Sol–Gel Process