On the sensitivity to partial pressure of oxygen of the mobility in cadmium oxide

Abstract

The partial pressure of oxygen during the deposition process of cadmium oxide is a crucial quantity whose influence on the electrical and optical properties of this material is really very significant (consider, for example, the experimental technique known as activated reactive evaporation). In fact, this paper is a theoretical formulation to evaluate the sensitivity changes of the aforementioned pressure of the electron drift-mobility and velocity in CdO. Indeed, as we will see later, given that the electron relaxation time depends upon the oxygen partial pressure, then the electron drift-mobility, mean free path and velocity also depend on this pressure. Relevant calculations involving the above physical quantities are carried out.