Influence of oxygen partial pressure on the physical behaviour of CdO films prepared by activated reactive evaporation-Reference-Cited by-同舟云学术

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Influence of oxygen partial pressure on the physical behaviour of CdO films prepared by activated reactive evaporation

Published:1993-01 Issue:5-6 Volume:15 Page:356-358
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Sravani C.,Ramakrishna Reddy K.T.,Reddy P.Jayarama

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Degenerate cadmium oxide films for electronic devices

2. A semiconductor-insulator-semiconductor CdOSiO2Si solar cell

3. Thin film solar cells;Chopra,1983

4. The Structure of the Indirect Absorption Edge of CdO

5. Electrical and Optical Properties of CdO-Si Junctions

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On Non-stoichiometry and Partial Pressure of Oxygen in CdO thin Films;Russian Journal of Physical Chemistry B;2022-02

2. Structural and optical properties of Fe3+ doped ZnCdO nanostructures for luminescent application;Optik;2020-03

3. Evaluating Electron Diffusivity and Conductivity in Crystalline Cadmium Oxide;Russian Journal of Physical Chemistry A;2018-12

4. Estimating maximal disorder in amorphous solids;Journal of Non-Crystalline Solids;2018-02

5. Nonlinear Dynamical Analysis on the Formation of Cadmium Oxide by Laser Deposition;East European Journal of Physics;2018

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