ELECTRON TRANSPORT IN SILICON QUANTUM WIRE DEVICES

Abstract

The simulation of the electron transport in silicon devices is usually based on a coupling of the semiclassical Boltzmann transport equation with the Poisson equation. We follow this successful approach and extend it with the effective mass Schrödinger equation leading to a Schrödinger–Poisson–Boltzmann system for the description of the electron transport in silicon quantum wire devices. Phonon-scattering is taken into account by phonon distributions in thermal equilibrium. In addition, we study the nonsteady state behavior of the electron transport in the considered device.