DIRECTIONAL DIFFUSION OF K ATOMS ON A GaAs(110) SURFACE-Reference-Cited by-同舟云学术

DIRECTIONAL DIFFUSION OF K ATOMS ON A GaAs(110) SURFACE

Published:2006-12 Issue:06 Volume:05 Page:895-900
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

ISHIDA NOBUYUKI¹,SUBAGYO AGUS¹,SUEOKA KAZUHISA¹

Affiliation:

1. Graduate School of Information Science and Technology, Hokkaido University, Kita-14 Nishi-9, Kita-ku, Sapporo, 060-0814, Japan

Abstract

We performed STM measurements on the K/GaAs (110) surface with high K coverage. The K atoms gradually disappeared while scanning the tip over the surface at negative sample bias voltage. The phenomenon strongly occurred over the scanning area and can be explained by the field-induced surface diffusion from the scanning area to radial direction. Considering the interaction between the dipole moment of the adsorbed K atoms and the electric field, we discuss the relationship between the static and induced dipole moment of K atoms on a GaAs (110) surface.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X06005339

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1. Structural and electronic properties of theK∕GaAs(110)surface;Physical Review B;2008-02-27