INFLUENCE OF AMMONIATING TIME ON Nb-CATALYZED GaN NANOSTRUCTURED MATERIALS

Abstract

Gallium nitride ( GaN ): nanostructured materials are synthesized by ammoniating Ga2O3/Nb films which are deposited in turn on Si(111) substrates at 900°C. The morphology and structure of the nanostructured materials are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Optical property of GaN nanostructured materials are analyzed by photoluminescence (PL). The results demonstrated that as-synthesized nanostructured materials are hexagonal wurtzite-structured. Ammoniating time of the samples has an evident influence on the morphology of GaN nanostructured materials synthesized by this method. The PL spectra indicate good emission property for the nanostructured materials. Finally, the growth mechanism is also briefly discussed.