Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications-Reference-Cited by-同舟云学术

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Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications

Published:2006-06-15 Issue:14 Volume:17 Page:3394-3399
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Kim T H,Lee S Y,Cho N K,Seong H K,Choi H J,Jung S W,Lee S K

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/17/i=14/a=009/pdf

Reference23 articles.

1. One-Dimensional Nanostructures: Synthesis, Characterization, and Applications

2. Single-crystal gallium nitride nanotubes

3. Gallium Nitride Nanowire Nanodevices

4. Large-scale synthesis of single crystalline gallium nitride nanowires

5. Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

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