Resistive Switching Behavior of Au/TiO2/NiCr Structure

Abstract

Thin film memristor behavior depends on the choice of top and bottom electrode material and metal oxide layer. In the present work, the influence of the top and bottom electrode layers on the electric field-induced resistance switching phenomena of TiO2-based MIM was studied. Au/TiO2/NiCr and NiCr/TiO2/Au structures were fabricated by depositing TiO2 active layer by reactive dc magnetron sputtering technique between thermally evaporated NiCr and Au electrodes. TiO2 layer was sputtered with a cathode power of 150[Formula: see text]W keeping the other deposition parameters constant. TiO2 films were analyzed by X-ray diffractometer, field emission scanning electron microscopy and UV–Visible spectrophotometer to investigate their structural, morphological and optical behavior. Structural studies of the films reveal that the samples were amorphous. And the [Formula: see text]–[Formula: see text] analysis for the fabricated MIM structure was analyzed.