Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)-Reference-Cited by-同舟云学术

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Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)

Published:2015-01 Issue: Volume:103 Page:190-194
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chin Fun-Tat,Lin Yu-Hsien,Yang Wen-Luh,Liao Chin-Hsuan,Lin Li-Min,Hsiao Yu-Ping,Chao Tien-Sheng

Funder

National Science Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Nanoscale 2-Bit/Cell HfO$_{\bf 2}$ Nanocrystal Flash Memory

2. Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$

5. Resistive switching characteristics of ZnO based ReRAMs with different annealing temperatures

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1. Impact of inert electrode on the volatility and non-volatility switching behavior of SiO2-based conductive bridge random access memory devices;Applied Physics Letters;2024-07-08

2. Effects of high energy heavy ion irradiation on resistive switches;Microelectronic Engineering;2020-07

3. Resistive Switching Behavior of Au/TiO2/NiCr Structure;International Journal of Nanoscience;2018-05-21

4. Improvement of switching endurance of conducting-bridge random access memory by addition of metal-ion-containing ionic liquid;Japanese Journal of Applied Physics;2017-03-27

5. A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique;physica status solidi (a);2016-12-22

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