INFLUENCE OF INHOMOGENEITY OF A MULTILAYER STRUCTURE ON REDISTRIBUTION OF INFUSED DOPANT DURING PRODUCTION — A BIPOLAR TRANSISTOR

Abstract

It has been recently shown, that inhomogeneity of a multilayer structure leads to increasing of sharpness of diffusion-junction rectifier (see, for example, Refs. 1–3), which was formed in the multilayer structure. It has also been shown, that together with increasing sharpness the homogeneity of impurity distribution in doped area increases. In this paper both the effects (increasing of the sharpness of diffusion-junction rectifier and increasing the homogeneity of impurity distribution) have been used for production of a system of p-n-junctions (a bipolar transistors). Annealing time has been optimized for simultaneously increasing the sharpness and the homogeneity.