Doping of Materials During Manufacture <I>p</I>–<I>n</I>-Junctions and Bipolar Transistors. Analytical Approaches to Model Technological Approaches and Ways of Optimization of Distributions of Dopants-Reference-Cited by-同舟云学术

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Doping of Materials During Manufacture p–n-Junctions and Bipolar Transistors. Analytical Approaches to Model Technological Approaches and Ways of Optimization of Distributions of Dopants

Published:2013-03-01 Issue:1 Volume:1 Page:58-82
ISSN:2327-1515
Container-title:Reviews in Theoretical Science
language:en
Short-container-title:Reviews in Theoretical Science

Author:

Pankratov E. L.,Bulaeva E. A.

Publisher

American Scientific Publishers

Cited by 244 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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