TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES-Reference-Cited by-同舟云学术

TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES

Published:2004-02 Issue:01n02 Volume:03 Page:171-176
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

KOLODZEY J.¹,ADAM T. N.¹,TROEGER R. T.¹,LV P.-C.¹,RAY S. K.¹,YASSIEVICH I.²,ODNOBLYUDOV M.²,KAGAN M.³

Affiliation:

1. Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, USA

2. Ioffe Physico-Technical Institute, RAS, 198026 St. Petersburg, Russia

3. Institute of Radioengineering and Electronics, RAS, 101999 Moscow, Russia

Abstract

Terahertz (THz) electroluminescence was produced by three different types of sources: intersubband transitions in silicon germanium quantum wells, resonant state transitions in boron-doped strained silicon germanium layers, and hydrogenic transitions from dopant atoms in silicon. The devices were grown by molecular beam epitaxy, fabricated by dry etching, and characterized by infrared spectroscopy. The absorption of THz was observed in silicon germanium quantum wells at energies corresponding to heavy hole and light hole intersubband transitions. These results suggest that SiGe nanotechnology is attractive for THz device applications.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X0400195X

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