Optimization of Electrical Parameters for the Gate Stack Double Gate (GSDG) Mosfet Using PSO Variants-Reference-Cited by-同舟云学术

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Optimization of Electrical Parameters for the Gate Stack Double Gate (GSDG) Mosfet Using PSO Variants

Published:2019-07-23 Issue: Volume: Page:
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

Chowdhury Dibyendu,De Bishnu Prasad,Maji Kanchan Baran,Kar Sumalya Ghosh Rajib,Mandal Durbadal,Bhunia Sunandan

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X20400037

Reference15 articles.

1. A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs

2. Multi-objective genetic algorithms based approach to optimize the electrical performances of the gate stack double gate (GSDG) MOSFET

3. Subthreshold behavior optimization of nanoscale Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET using multi-objective genetic algorithms

4. Electrical Performance Optimization of Nanoscale Double-Gate MOSFETs Using Multiobjective Genetic Algorithms

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