EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)-Reference-Cited by-同舟云学术

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

Published:2014-12 Issue:04 Volume:04 Page:1440025
ISSN:2010-3247
Container-title:SPIN
language:en
Short-container-title:SPIN

Author:

BELL GAVIN R.¹,BURROWS CHRISTOPHER W.¹,HASE THOMAS P. A.¹,ASHWIN MARK J.¹,MCMITCHELL SEAN R. C.¹,SANCHEZ ANA M.¹,ALDOUS JAMES D.²

Affiliation:

1. Department of Physics, University of Warwick, Coventry CV4 7AL, UK

2. London Centre for Nanotechnology, University College London, 17-19 Gordon Street London WC1H 0AH, UK

Abstract

The cubic polymorph of the binary transition metal pnictide (TMP) MnSb , c- MnSb , has been predicted to be a robust half-metallic ferromagnetic (HMF) material with minority spin gap ≳1 eV. Here, MnSb epilayers are grown by molecular beam epitaxy (MBE) on GaAs and In 0.5 Ga 0.5 As (111) substrates and analyzed using synchrotron radiation X-ray diffraction. We find polymorphic growth of MnSb on both substrates, where c- MnSb co-exists with the ordinary niccolite n- MnSb polymorph. The grain size of the c- MnSb is of the order of tens of nanometer on both substrates and its appearance during MBE growth is independent of the very different epitaxial strain from the GaAs (3.1%) and In 0.5 Ga 0.5 As (0.31%) substrates.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S2010324714400256

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