VOLTAGE CONTROL OF MAGNETISM IN MULTIFERROIC HETEROSTRUCTURES AND DEVICES

Author:

SUN NIAN X.1,SRINIVASAN GOPALAN2

Affiliation:

1. Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA

2. Department of Physics, Oakland University, Rochester 48309, MI, USA

Abstract

Multiferroic materials and devices have attracted intensified recent interests due to the demonstrated strong magnetoelectric (ME) coupling in new multiferroic materials and devices with unique functionalities and superior performance characteristics. Strong ME coupling has been demonstrated in a variety of multiferroic heterostructures, including bulk magnetic on ferro/piezoelectric multiferroic heterostructures, magnetic film on ferro/piezoelectric slab multiferroic heterostructures, thin film multiferroic heterostructures, etc. Different multiferroic devices have been demonstrated, which include magnetic sensors, energy harvesters, and voltage tunable multiferroic RF/microwave devices which are compact, lightweight, and power efficient. In this progress report, we cover the most recent progress on multiferroic heterostructures and devices with a focus on voltage tunable multiferroic heterostructures and devices with strong converse ME coupling. Recent progress on magnetic-field tunable RF/microwave devices are also covered, including novel non-reciprocal tunable bandpass filters with ultra wideband isolation, compact, low loss and high power handling phase shifters, etc. These novel tunable multiferroic heterostructures and devices and tunable magnetic devices provide great opportunities for next generation reconfigurable RF/microwave communication systems and radars, Spintronics, magnetic field sensing, etc.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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