A NEW TECHNIQUE FOR EXTRACTING THE MOSFET THRESHOLD VOLTAGE USING NOISE MEASUREMENTS

Abstract

In this work we propose a new technique for the evaluation of the threshold voltage of MOS transistors based on the measurement of the channel thermal noise. Since this new method allows the evaluation of the threshold voltage without any current flowing through the channel, it inherently eliminates the limitations coming from the need of using too approximate models for the interpretation of current-voltage measurements in MOS devices. The results of actual measurements on p-channel MOSFETs are reported that confirm the validity and the significance of the proposed approach.