Optimizing VO2 film properties for use in SAW devices

Abstract

The aim of this study is to optimize the conditions for producing thin VO2 films for their use in SAW devices. We used the pulsed laser deposition (PLD) method to produce VO2 films. We used a metallic vanadium target. The dependence of the oxygen pressure during PLD on the resistive metal–insulator transition (MIT) on substrates of [Formula: see text]-sapphire and LiNbO3 YX/128[Formula: see text] was studied. The resulting films had sharp metal–insulator temperature transitions on [Formula: see text]-Al2O3. The most high-quality films showed resistance change by four orders of magnitude. At the lower point of the hysteresis, the resistance of these samples was in the range of 50–100 [Formula: see text]. The synthesized VO2 films had a sharp temperature transition and a relatively small width of thermal hysteresis. The SAW damping during its passage through a VO2/ZnO/LiNbO3 YX/128[Formula: see text] film at the metal–insulator phase transition temperature was studied. Attenuation SAW decreases with increasing temperature from 52 dB/cm to 0 dB/cm.