IN-SITU HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY STUDIES OF TWO-DIMENSIONAL ISLAND-DECAY KINETICS ON ATOMICALLY SMOOTH TiN(001)-Reference-Cited by-同舟云学术

IN-SITU HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY STUDIES OF TWO-DIMENSIONAL ISLAND-DECAY KINETICS ON ATOMICALLY SMOOTH TiN(001)

Published:2000-10 Issue:05n06 Volume:07 Page:589-593
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

KODAMBAKA S.¹,PETROVA V.¹,VAILIONIS A.¹,DESJARDINS P.¹,CAHILL D. G.¹,PETROV I.¹,GREENE J. E.¹

Affiliation:

1. Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA

Abstract

In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flat TiN (001) terraces and in single-atom deep vacancy pits at temperatures of 750–950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs–Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23±0.05 eV/Å and an activation energy for adatom formation and diffusion of 3.4±0.3 eV.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X00000816

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