ULTRAHIGH VACUUM ATOMIC FORCE MICROSCOPY: TRUE ATOMIC RESOLUTION-Reference-Cited by-同舟云学术

ULTRAHIGH VACUUM ATOMIC FORCE MICROSCOPY: TRUE ATOMIC RESOLUTION

Published:1997-10 Issue:05 Volume:04 Page:1025-1029
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

LÜTHI R.¹,MEYER E.¹,BAMMERLIN M.¹,BARATOFF A.¹,HOWALD L.¹,GERBER CH.²,GÜNTHERODT H.-J.¹

Affiliation:

1. Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

2. IBM Research Laboratory Zurich, Switzerland

Abstract

In this note we report the first observation of salient features of the Si(111)(7×7) reconstructed surface across monatomic steps by dynamic atomic force microscopy (AFM) in ultrahigh vacuum (UHV). Simultaneous measurements of the resonance frequency shift Δf of the Si cantilever and of the mean tunneling current [Formula: see text] from the cleaned Si tip indicate a restricted range for stable imaging with true atomic resolution. The corresponding characteristics vs. distance reveal why feedback control via Δf is problematic, whereas it is as successful as in conventional STM via [Formula: see text]. Furthermore, local dissipation (energy loss of 10-14 W) through individual atoms is observed and explained by the coupling of the surface atoms to phonons.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X9700122X

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