MODELING FOR FORMATION OF CONDUCTING PATH IN Cu/SiO2/Pt MEMORY DEVICES: BASED ON SOFT BREAKDOWN MECHANISM

Abstract

The forming process before resistive switching in Cu / SiO 2/ Pt memory devices, corresponding to the formation of conducting path, can be regarded as the dielectric soft breakdown. Based on the analysis of breakdown mechanism, a dynamic model combining the transition of Cu ions with the space-charge effect has been proposed, and demonstrates that the forming voltage depends on the thickness of oxide, the sweep rate of voltage and temperature. The predictions of the model are consistent with the experiment data reported in the literature and it is believed that the transition of Cu ions across the oxide and the accumulation of Cu ions at the SiO 2/ Pt interface could be responsible for the conductive path formation in Cu / SiO 2/ Pt memory devices.