Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3428779
Reference16 articles.
1. A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte
2. Low current resistive switching in Cu–SiO2 cells
3. Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
4. Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
5. On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
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