ELECTRONIC STRUCTURE OF GaxIn1-xASyP1-y QUATERNARY ALLOY BY RECURSION METHOD

Abstract

The electronic structure of Ga x In 1-x As y P 1-y quaternary alloy, calculated by recursion method is reported. A five orbitals sp3s* per atom model was used in the tight-binding representation of the Hamiltonian. The local density of states and its orbital decomposition (LDOS), integrated density of states (IDOS) and structural energy (STE) were calculated for Ga, In, As and P sites in Ga 0.5 In 0.5 As 0.5 P 0.5, GaInAsP lattice matched to InP and lattice matched to GaAs as well. There are 216 atoms arranged in a zinc-blend structure. The calculated quantities are as expected for such systems.