Optical gain evaluation in GaInAsP quantum‐well lasers: A comparison of the different growth techniques
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359005
Reference14 articles.
1. Superconducting thin‐film flux transformers of YBa2Cu3O7−x
2. Strained-layer 1.5 μm wavelength InGaAs/InP multiple quantum well lasers grown by chemical beam epitaxy
3. Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy
4. Strain-induced performance improvements in long-wavelength, multiple-quantum-well, ridge-waveguide lasers with all quaternary active regions
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy;Journal of Crystal Growth;2005-03
2. Strain optimization for high differential gain and low current operation in 1.55 μm InGaAs/InGaAsP quantum well lasers;Journal of Applied Physics;1999-12
3. ELECTRONIC STRUCTURE OF GaxIn1-xASyP1-y QUATERNARY ALLOY BY RECURSION METHOD;International Journal of Modern Physics B;1999-01-10
4. Very high compositional homogeneity of 1.55μm strain-compensated InGaAsP MQW structures by MOVPE under N2 atmosphere;Journal of Crystal Growth;1998-12
5. Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission;IEEE Journal of Selected Topics in Quantum Electronics;1996-06
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