AGING EFFECT ON THE PHOTOSYNTHESIZED POROUS SILICON

Abstract

The photoluminescence spectrum of the freshly photosynthesized porous silicon (PS) has been investigated. This measurement was repeated after three and six months for the same sample after storage under ambient condition (open air at room temperature). Photoluminescence (PL) measurements of the stored PS show different peak positions and intensity width as compared with the results of the fresh PS. A blue shift in PL peak positions with aging time was observed. PL relative intensity is strongly diminished after 6 months of aging. Dark I-V characteristics of Al/PS/n - Si/Al structure shows a behavior of PS/n - Si isotype heterojunction for fresh device and a MIS (metal-insulator-semiconductor) device due to contribution of Al/PS Schottky barrier after aging, essentially after 6 months.