HALL MOBILITY IN n-TYPE 4H-SiC: CALCULATION USING HYDRODYNAMIC BALANCE EQUATIONS

Abstract

The Hall mobility in n-type 4H-SiC has been calculated by hydrodynamic balance equations for temperatures ranging from 30 to 1000 K. We employ a compensation model to analyze the carrier concentration versus temperature data. The results show that the neutral impurity scattering and the piezoelectric scattering do not make significant contribution to the electron mobility. The low-temperature value of the mobility is mainly due to the ionized impurity while the high-temperature tail is limited by acoustic, polar optical and intervalley optical lattice scatterings. These results are in good agreement with the experimental data.