MICROSTRUCTURE AND PROPERTIES OF Sm-DOPED BaTiO3 SPUTTERED FILMS: EFFECTS OF POST-ANNEALINGS AND DOPANT CONTENT-Reference-Cited by-同舟云学术

MICROSTRUCTURE AND PROPERTIES OF Sm-DOPED BaTiO3 SPUTTERED FILMS: EFFECTS OF POST-ANNEALINGS AND DOPANT CONTENT

Published:2011-04-30 Issue:11 Volume:25 Page:1559-1565
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

WU C. H.¹,CHU J. P.¹,WANG S. F.²,CHANG W. Z.¹

Affiliation:

1. Graduate Institute of Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan

2. Department of Materials and Minerals Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan

Abstract

Sm-doped BaTiO 3 thin films with ~200 nm thickness fabricated by rf magnetron sputtering system onto Pt/Ti/SiO 2/ Si substrates have been investigated. The effects of postannealing and the dopant content in a range of 0.1 to 2.2 at.% on microstructure and electrical properties were studied. The films were found to be amorphous in the as-deposited state and became fully crystallized after annealing at 750°C and above. The addition of Sm in the BaTiO 3 films resulted in the inhibition of grain growth. Electrical characterizations show that the dielectric permittivity increased with increasing annealing temperatures and the 2.2% Sm-doped film had the low leakage current of 1.29×10-9 A at an applied electric field of 100 KV/cm.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979211100564

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