Electronic exchange-correlation, many-body effect issues on first-principles calculations of bulk SiC polytypes
Author:
Affiliation:
1. Institut des Sciences, Centre Universitaire-Belhadj Bouchaib-Ain Temouchent, Route de Sidi Bel Abbes, B.P. 284, Ain Temouchent 46000, Algeria
2. Department of Physics and I3N, University of Aveiro, Campus Santiago, Aveiro 3810-193, Portugal
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0217979218503289
Reference44 articles.
1. General Properties of Bulk SiC
2. Phosphorus‐related donors in 6H‐SiC generated by ion implantation
3. Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2
4. Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen
5. VII. Über die Krystalle des Carborundums
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