INVESTIGATION ON OXIDE GROWTH MECHANISM OF PECVD SILICON CARBIDE FILMS

Abstract

The effect of the Si-C , Si-CH3 , C-Hn , Si-H and Si dangling bonds on the oxidation process was investigated by monitoring the changes of these bands as a function of oxidation temperature or duration using the infrared spectroscopy technique. We concluded that the activation energy obtained from the linear regime of the oxide growth is related to the C-Hn bonds. We suggested that most of the C-Hn bonds were bonded to Si with n = 3 , that gave rise to voids to facilitate the oxidation of amorphous silicon carbide films.