Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications

Author:

Alaydin B. O.12

Affiliation:

1. Department of Physics, Institute for Quantum Electronics, ETH Zürich, 8093 Zürich, Switzerland

2. Department of Physics, Faculty of Science, Cumhuriyet University, 58140 Sivas, Turkey

Abstract

Effect of high bandgap [Formula: see text] nm AlAs on the electronic and optical properties of the [Formula: see text]/[Formula: see text] superlattice is investigated by using effective mass approximation under the electric field. Electronic transitions are obtained as 0.403 eV and 0.023 eV for [Formula: see text] and [Formula: see text] in the gain region. Thin AlAs increases electron confinement in the superlattice and prevents electron leakage in the gain region which mostly results in higher absorption/emission in the superlattice. AlAs has no major effects on transitions energies in the gain region but it is effectively decreasing the total absorption in the injector region and preventing the internal absorption. AlAs also makes the superlattice optically more stable by decreasing the high refractive index change in the injector region by factor 5.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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