Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications
Author:
Affiliation:
1. Department of Physics, Institute for Quantum Electronics, ETH Zürich, 8093 Zürich, Switzerland
2. Department of Physics, Faculty of Science, Cumhuriyet University, 58140 Sivas, Turkey
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0217979221500272
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