ELECTROPHORETIC ASSEMBLY OF POROUS SILICON-Reference-Cited by-同舟云学术

ELECTROPHORETIC ASSEMBLY OF POROUS SILICON

Published:2002-11-20 Issue:28n29 Volume:16 Page:4306-4309
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

LI HUAIXIANG¹,XUE CHENGSHAN¹,ZHANG HUA¹,GUO CHENGHUA¹,LI CHUANBO¹,CHEN LUSHENG¹,DIAO ZHAOYU¹

Affiliation:

1. Chemical Function Mate. Lab, Institute of Semiconductors, Shandong Normal University, Jinan 250014, China

Abstract

Electrophoretic assembly of porous silicon (PS) has been studied in the present paper. A toluene/porous silicon suspension was prepared by the sonication of anodically etched porous silicon wafers and showed a PL property similar to the as-prepared PS, giving 620nm orange-red photoluminescence emissions. A broad optical absorption band about 286nm arising from scattering and absorption of the light by the PS particles has been observed. The PS particles suspended in toluene drifted towards the positive electrode and have been assembled on the surface of P+Si or indium-tin oxide (ITO) electrodes under a electric field of 100~600V/cm. The assembled PS films showed a quite stable PL property after ageing for 280 days even though there were some oxides revealed by XPS analysis.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979202015315

Reference12 articles.

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2. Decay Dynamics and Quenching of Photoluminescence from Silicon Nanocrystals by Aromatic Nitro Compounds

3. The structural and luminescence properties of porous silicon

4. Charge-Tunable Optical Properties in Colloidal Semiconductor Nanocrystals

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