DOPING AND GROWTH OF THIN Si EPILAYER AND SiGe BY UHV/CVD

Abstract

The real time B-doped thin Si and SiGe epilayers on diameter 3-inch Si substrates were grown by an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system. The substrate temperature during growth was from 550 ~ 780°C. The properties of the epilayers were characterized by secondary ion mass spectrum (SIMS), Fourier transform infrared spectroscopy (FTIR), spreading resistance profile (SRP) and double crystal x-ray diffraction (DCXRD). The carrier concentration in the intrinsic Si epilayer was about 1012 cm -3 and the resistivity was as high as about 10000 Ωcm. In addition, the abrupt transition and B-doped concentration of 1015 ~ 1019 cm -3 were achieved for Si and SiGe epilayers.