PROBING THE SCATTERING POTENTIAL OF N-IMPURITIES IN GaAs BY MAGNETO-TUNNELING-Reference-Cited by-同舟云学术

PROBING THE SCATTERING POTENTIAL OF N-IMPURITIES IN GaAs BY MAGNETO-TUNNELING

Published:2007-04-10 Issue:08n09 Volume:21 Page:1600-1604
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

ALLISON G.¹,PATANÈ A.¹,ENDICOTT J.¹,EAVES L.¹,MORI N.²,KOZLOVA N.³,FREUDENBERGER J.³,MIURA N.³⁴,MAUDE D. K.⁵,HOPKINSON M.⁶

Affiliation:

1. School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK

2. Department of Electronic Engineering, Osaka University, Osaka, 565-0871, Japan

3. IFW Dresden, Institute for Metallic Materials, P.O.-Box 270116, D-01171 Dresden, Germany

4. Dresden High Magnetic Field Laboratory, Germany

5. Grenoble High Magnetic Field Laboratory, C.N.R.S. Grenoble, F-38042, France

6. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S3 3JD, UK

Abstract

We study the strong effect of a small concentration (1 part per 1000) of randomly distributed N-resonant scatterers on the quantized Landau level states of a GaAs quantum well. Our magneto-tunneling spectroscopy measurements allow us to probe the resonant and non-resonant component of the N-related scattering potential.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979207043270

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