Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers

Author:

Gao J.1,Kang L.1,Wong H. Y.1,Cheung Y. L.1,Yang J.2

Affiliation:

1. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China

2. Superconducting Material Research Center, Beijing General Research Institute for Nonferrous Metals, No.2 Xin Jie Kou Wai Street, Beijing, 100088, China

Abstract

Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu 2 CuO 4/ YSZ (yttrium-stabilized ZrO 2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu 2 CuO 4/ YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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