Silicon Nitride on Si: Electronic Structure for Flash Memory Devices
Author:
Affiliation:
1. A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, 13, Lavrentieva Ave. 630090, Novosibirsk, Russia
Publisher
WORLD SCIENTIFIC
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4);Nanomaterials;2023-08-09
2. Multiphonon trap ionization mechanism in amorphous SiNx;Journal of Non-Crystalline Solids;2022-04
3. Memory Properties of SiOx- and SiNx-Based Memristors;Nanobiotechnology Reports;2021-11
4. Charge Transport Mechanism in a Formless Memristor Based on Silicon Nitride;Russian Microelectronics;2020-09
5. Mechanism of stress induced leakage current in Si3N4;Materials Research Express;2019-04-03
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