Analysis of Crosstalk-Induced Effects in Multilayer Graphene Nanoribbon Interconnects

Abstract

Crosstalk effects in multilayer graphene nanoribbon (GNR) interconnects for the future nanoscale integrated circuits are investigated with the help of ABCD parameter matrix approach for intermediate- and global-level interconnects at 11[Formula: see text]nm and 8[Formula: see text]nm technology nodes. The worst-case crosstalk-induced delay and peak crosstalk noise voltages are derived for both neutral and doped zigzag GNR interconnects and compared to those of conventional copper interconnects. The worst-case crosstalk delays for perfectly specular, doped multilayer GNR interconnects are less than 4% of that of copper interconnects for 1[Formula: see text]mm long intermediate interconnects and less than 7% of that of copper interconnects for 5[Formula: see text]mm long global interconnects at 8[Formula: see text]nm node. As far as the worst-case peak crosstalk noise voltage is concerned, neutral GNR interconnects are slightly better performing than their doped counterparts. But from the perspective of overall noise contribution, doped GNR interconnects outperform neutral ones for all the cases. Finally, our analysis shows that from the signal integrity perspective, perfectly specular, doped multilayer zigzag GNR interconnects are a suitable alternative to copper interconnects for the future-generation integrated circuit technology.