Affiliation:
1. School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an Shaanxi, Xi’an 710071, P. R. China
Abstract
A low-power, low-supply, low-complexity all-MOSFET voltage reference is implemented in 0.18[Formula: see text][Formula: see text]m CMOS process. With the proposed architecture, the number of the transistors can be reduced to the greatest extent. As a result, the supply voltage can not only be decreased to as low as 0.7[Formula: see text]V, but the power consumption can also be optimized significantly. Simulation results show that the power consumption is 47[Formula: see text]nW, at a supply of 0.7[Formula: see text]V. A temperature coefficient (TC) of 42[Formula: see text]ppm/[Formula: see text]C is achieved when the temperature ranges from [Formula: see text]20[Formula: see text]C to 80[Formula: see text]C. At room temperature, the voltage reference features a line regulation (LR) of 2.66%/V.
Funder
the National Natural Science Foundation of China
the China Postdoctoral Science Foundation
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture
Cited by
8 articles.
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