193-nm Photoresists Based on Norbornene Copolymers with Derivatives of Bile Acid
Author:
Publisher
The Chemical Society of Japan
Subject
General Chemistry
Reference14 articles.
1. Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification
2. Impact of 2-Methyl-2-Adamantyl Group Used for 193-nm Single-Layer Resist
3. Transparent photoacid generator (ALS) for ArF excimer laser lithography and chemically amplified resist
4. Function-integrated alicyclic polymer for ArF chemically amplified resists
5. RESOLUTION AND ETCH RESISTANCE OF A FAMILY OF 193nm POSITIVE RESISTS
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