Magnetic Random Access Memory (MRAM)

Abstract

Abstract The principle of storing information in a solid state magnetic device is first described together with the principles and early designs of such a system which were implemented for a restricted range of applications. In particular third generation MRAM where again data is stored perpendicular to the plane of the film and is based on the phenomenon of spin transfer torque (STT) switching where a polarised spin current is used to switch small elements which are subsequently read by the incorporation of a spin tunnel junction within the dots is discussed. Potential future MRAM structures such as spin torque oscillators and switching by spin orbit torques (SOT) is also presented.