Magnetic tunnel junction based magnetoresistive random access memory-Reference-Cited by-同舟云学术

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Magnetic tunnel junction based magnetoresistive random access memory

Published:2004 Issue: Volume: Page:231-381
ISSN:
Container-title:Magnetoelectronics
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Author:

Kerman Johan,DeHerrera Mark,Durlam Mark,Engel Brad,Janesky Jason,Mancoff Fred,Slaughter Jon,Tehrani Saied

Publisher

Elsevier

Reference33 articles.

1. Correlated magnetic vortex chains in mesoscopic cobalt dot arrays;Aign;Phys. Rev. Lett.,1998

2. Tunneling criteria for magneticinsulator-magnetic structures;kerman;Appl. Phys. Lett.,2001

3. Comparison of oxidation methods for magnetic tunnel junction material;Chen;J. Appl. Phys.,2000

4. Inverse tunnel magnetoresistance in Co/SrTiO3/La0.7/Sr0.3MnO3: new ideas on spin-polarized tunneling;de Teresa;Phys. Rev. Lett.,1999

5. A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects;Durlam;IEEE 2002 Symp. VLSI Circuits,2003

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