Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique-Reference-Cited by-同舟云学术

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Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique

Published:2013-12-20 Issue:2 Volume:63 Page:161-166
ISSN:2050-5698
Container-title:Microscopy
language:en
Short-container-title:Microscopy (Tokyo)

Author:

Watanabe Kentaro,Nokuo Takeshi,Chen Jun,Sekiguchi Takashi

Publisher

Oxford University Press (OUP)

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Structural Biology

Link

http://academic.oup.com/jmicro/article-pdf/63/2/161/5856885/dft050.pdf

Reference14 articles.

1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

2. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices

3. Preparation and Properties of Bulk In[sub 1−x]Ga[sub x]As Alloys

4. Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

5. Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

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1. Exploring the potential of semiconducting BaSi2for thin-film solar cell applications;Journal of Physics D: Applied Physics;2016-11-28

2. Band-Gap Deformation Potential and Elasticity Limit of Semiconductor Free-Standing Nanorods Characterized in Situ by Scanning Electron Microscope–Cathodoluminescence Nanospectroscopy;ACS Nano;2015-02-20

3. Evaluation of minority carrier diffusion length of undoped n-BaSi2epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique;Japanese Journal of Applied Physics;2014-06-25

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