Band-Gap Deformation Potential and Elasticity Limit of Semiconductor Free-Standing Nanorods Characterized in Situ by Scanning Electron Microscope–Cathodoluminescence Nanospectroscopy-Reference-Cited by-同舟云学术

Band-Gap Deformation Potential and Elasticity Limit of Semiconductor Free-Standing Nanorods Characterized in Situ by Scanning Electron Microscope–Cathodoluminescence Nanospectroscopy

Published:2015-02-20 Issue:3 Volume:9 Page:2989-3001
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Watanabe Kentaro¹²,Nagata Takahiro¹,Wakayama Yutaka¹,Sekiguchi Takashi¹,Erdélyi Róbert³,Volk János³

Affiliation:

1. WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan

3. MTA EK Institute of Technical Physics and Materials Science, Konkoly Thege M. út 29-33, 1121 Budapest, Hungary

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn507159u

Reference58 articles.

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3. Gain and radiative current density in InGaAs/lnGaAsP lasers with electrostatically confined electron states

4. Tuning the Light Emission from GaAs Nanowires over 290 meV with Uniaxial Strain

5. Strain-engineered artificial atom as a broad-spectrum solar energy funnel

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