Effect of Ti diffusion on the microstructure of Ge2Sb2Te5in phase-change memory cell
Author:
Publisher
Oxford University Press (OUP)
Subject
Radiology Nuclear Medicine and imaging,Instrumentation,Structural Biology
Link
http://academic.oup.com/jmicro/article-pdf/64/6/381/7951997/dfv039.pdf
Reference14 articles.
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2. Electronic Switching in Phase-Change Memories
3. Song Y J , Ryoo K C , Hwang Y N , Jeong C W , Lim D W , Park S S , Kim J I , Kim J H , Lee S Y , Kong J H , Ahn S J , Lee S H , Park J H , Oh J H , Oh Y T , Kim J S , Shin J M , Fai Y , Koh G H , Jeong G T , Kim R H , Lim H S , Park I S , Jeong H S , Kim K (2006) Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology. In: Proceedings of Symposium on VLSI Technology Digest of Technical Papers , p. 146.
4. Kang D H , Kim J S , Kim Y T , Lee M K , Jun Y J , Park J H , Yeung F , Jeong C W , Yu J , Kong J H , Ha D W , Song S A , Park J , Park Y H , Song Y J , Eum C Y , Ryoo K C , Shin J M , Lim D W , Park S S , Kim J H , Park W I , Sim K R , Cheong J H , Oh J H , Park J H , Kim J I , Oh Y T , Lee K W , Koh S P , Eun S H , Kim N B , Koh G H , Jeong G T , Jeong H S , Kim K (2007) Novel heat dissipating cell scheme for improving a reset distribution in a 512M phase-change random access Memory (PRAM). In: Proceedings of the Symposium on VLSI Technology Digest of Technical Papers , p. 96.
5. Density changes upon crystallization of Ge2Sb2.04Te4.74 films
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1. Use of a Ti Buffer Layer to Improve the Mechanical Properties of Ge2Sb2Te5 Thin Films for Phase-Change Memory;JOM;2020-02-10
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