Affiliation:
1. Beijing Superstring Academy of Memory Technology , China
Abstract
Whether amorphous oxide semiconductor (AOS) is an enabler or pass-by for monolithic 3D DRAM is discussed, with current challenges and future directions proposed in this perspective.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Beijing Natural Science Foundation of China
Publisher
Oxford University Press (OUP)
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献