Control of Threading Dislocation Formation in La-doped BaSnO3 Films Grown by Hybrid Molecular Beam Epitaxy
Author:
Affiliation:
1. Department of Chemical Engineering and Material Science, University of Minnesota , Minneapolis, MN , United States
2. Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, MN , United States
Publisher
Oxford University Press (OUP)
Link
https://academic.oup.com/mam/article-pdf/30/Supplement_1/ozae044.567/58670352/ozae044.567.pdf
Reference7 articles.
1. Dopant Segregation Inside and Outside Dislocation Cores in Perovskite BaSnO3 and Reconstruction of the Local Atomic and Electronic Structures
2. Metallic line defect in wide-bandgap transparent perovskite BaSnO 3
3. Dislocation-Mediated Conductivity in Oxides: Progress, Challenges, and Opportunities
4. Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1
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