Metallic line defect in wide-bandgap transparent perovskite BaSnO 3-Reference-Cited by-同舟云学术

Metallic line defect in wide-bandgap transparent perovskite BaSnO 3

Published:2021-01-15 Issue:3 Volume:7 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Yun Hwanhui¹^ORCID,Topsakal Mehmet²^ORCID,Prakash Abhinav¹³⁴^ORCID,Jalan Bharat¹^ORCID,Jeong Jong Seok¹⁵^ORCID,Birol Turan¹^ORCID,Mkhoyan K. Andre¹^ORCID

Affiliation:

1. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA.

2. Nuclear Science and Technology Department, Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA.

3. Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.

4. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA.

5. Analytical Sciences Center, LG Chem Ltd., Daejeon, Republic of Korea.

Abstract

A metallic line defect is found in wide-bandgap perovskite oxide thin films.

Funder

Semiconductor Research Corporation

Air Force Office of Scientific Research

National Science Foundation

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference54 articles.

1. B. G. Yacobi D. B. Holt Extended Defects in Semiconductors (Cambridge Univ. Press 2007).

2. Electronic and ionic transport properties and other physical aspects of perovskites

3. Strong polarization enhancement in asymmetric three-component ferroelectric superlattices

4. Emergence of room-temperature ferroelectricity at reduced dimensions

5. Polar metals by geometric design

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