High-Speed Serializer for a 64 GS s<sup>−1</sup> Digital-to-Analog Converter in a 28 nm Fully-Depleted Silicon-on-Insulator CMOS Technology
-
Published:2018-09-04
Issue:
Volume:16
Page:99-108
-
ISSN:1684-9973
-
Container-title:Advances in Radio Science
-
language:en
-
Short-container-title:Adv. Radio Sci.
Author:
Widmann Daniel,Grözing Markus,Berroth Manfred
Abstract
Abstract. An attractive solution to provide several channels with very high data rates
of tens of Gbit s−1 for digital-to-analog converters (DACs) in arbitrary
waveform generators (AWGs) is to use a high speed serializer in front of the
DAC. As data sources, on-chip memories, digital signal processors or
field-programmable gate arrays can be used. Here, we present a serializer
consisting of a 19 channel 16:1 multiplexer (MUX) for output data rates up to
64 Gbit s−1 per channel and a low skew (∼ 8.8 ps)
two-phase frequency divider and clock distribution network that is completely
realized in static CMOS logic. The circuit is designed in a 28 nm
Fully-Depleted Silicon-on-Insulator (FD-SOI) technology and will be used in
an 8 bit 64 GS s−1 DAC between the on-chip memory and the DAC
output stage. Due to a four bits unary and four bits binary segmentation, a
19 channel MUX is required. Simulations on layout level reveal a
data-dependent peak-to-peak jitter of less than 1.8 ps at the output
of one MUX channel with a total average power consumption of approximately
1.15 W of the whole MUX and clock network.
Funder
Deutsche Forschungsgemeinschaft
Publisher
Copernicus GmbH
Reference13 articles.
1. Cao, J., Cui, D., Nazemi, A., He, T., Li, G., Catli, B., Khanpour, M., Hu, K., Ali, T., Zhang, H., Yu, H., Rhew, B., Sheng, S., Shim, Y., Zhang, B., and Momtaz, A.: A transmitter and receiver for 100Gb/s coherent networks with integrated 4x64GS/s 8b ADCs and DACs in 20nm CMOS, in: 2017 IEEE International Solid-State Circuits Conference (ISSCC), 484–485, 2017. a, b, c, d 2. Chao, S. F., Kuo, J. J., Lin, C. L., Tsai, M. D., and Wang, H.: A DC-11.5 GHz Low-Power, Wideband Amplifier Using Splitting-Load Inductive Peaking Technique, IEEE Microw. Wirel. Co., 18, 482–484, 2008. a 3. Greshishchev, Y. M., Pollex, D., Wang, S. C., Besson, M., Flemeke, P., Szilagyi, S., Aguirre, J., Falt, C., Ben-Hamida, N., Gibbins, R., and Schvan, P.: A 56GS/S 6b DAC in 65nm CMOS with 256x6b memory, in: 2011 IEEE International Solid-State Circuits Conference, 194–196, 2011. a 4. Huang, H., Heilmeyer, J., Grözing, M., and Berroth, M.: An 8-bit 100-GS/s distributed DAC in 28-nm CMOS, IEEE Rad. Freq. Integr., 65–68, 2014. a 5. Huang, H., Heilmeyer, J., Grözing, M., Berroth, M., Leibrich, J., and Rosenkranz, W.: An 8-bit 100-GS/s Distributed DAC in 28-nm CMOS for Optical Communications, IEEE T. Microw. Theory, 63, 1211–1218, 2015. a, b
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
|
|