Author:
Erkaboev U. I.,Sayidov N. A.,Negmatov U. M.,Rakhimov R. G.,Mirzaev J. I.
Abstract
This article investigated the temperature dependence of the width band gap in InxGa1-xAs quantum well in the presence of a transverse strong magnetic field. A new method was proposed for determining the width band gap of GaAs/InxGa1-xAs heterostructures based on a InxGa1-xAs quantum well in the presence of a magnetic field and temperature. An analytical expression is obtained for calculating the width band gap of a rectangular quantum well at various magnetic fields and temperatures.
Reference19 articles.
1. Karpovich I.A., Filatov D.O., Gorshkov A.P., Photoelectric diagnostics of quantum-dimensional hetero nanostructures, Nizhny Novgorod. Publishing house "NNGU". 2007. P.87.
2. Fedorov A.V., Physics and technology of heterostructures, optics of quantum nanostructures, St.Petersburg: ed. "SPbGU ITMO", 2009. P. 195 (In Russian).
3. Optical properties of quantum-confined heterostructures based on GaP x N y As1 − x − y alloys
4. Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献